零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
CEU75A3 | N-Channel Enhancement Mode Field Effect Transistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE25VoltsCURRENT60Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO |
詳細(xì)參數(shù)
- 型號:
CEU75A3
- 制造商:
CET
- 制造商全稱:
Chino-Excel Technology
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
SOT-252 |
12500 |
絕對原裝現(xiàn)貨,價(jià)格低,歡迎詢購! |
詢價(jià) | ||
CET/華瑞 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
CET/華瑞 |
24+ |
TO252 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價(jià) | ||
CET/華瑞 |
24+ |
TO-252 |
499578 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-252 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低 |
詢價(jià) | ||
SR |
23+ |
TO252 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
CET |
2020+ |
TO-252 |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
CET |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價(jià) | ||
CET |
22+23+ |
TO252 |
75849 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CET |
24+ |
TO-252 |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) |
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