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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEF02N6	文件：45.44 Kbytes Page：5 Pages	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6	文件：132.65 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N65A	文件：539.32 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N65D	文件：350.41 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N65G	文件：599.68 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N6A	文件：125.19 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6A	文件：592.86 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N6G	文件：398.08 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6G	文件：599.54 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEI02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEI02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N6	文件：75.08 Kbytes Page：5 Pages	N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N6A	文件：592.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N6G	文件：599.54 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N6G	文件：398.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N6	文件：44.81 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N6A	文件：123.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N6A	文件：1.52203 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER

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型號：
CEF02N6
功能描述：
600V N Channel MOS

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市毅創(chuàng)騰電子科技有限公司	CEF02N6	CET	23+	TO220/3	7000	絕對全新原裝!100%保質(zhì)量特價!請放心訂購!	詢價
深圳市一線半導(dǎo)體有限公司	CEF02N6	CET	24+	TO2203	1855		詢價
深圳市鵬和科技有限公司	CEF02N6	CET	24+	TO-220F	5000	只做原裝公司現(xiàn)貨	詢價
深圳市永貝爾科技有限公司	CEF02N6	CET	23+	原廠原包	19960	只做進(jìn)口原裝終端工廠免費送樣	詢價
深圳市航潤創(chuàng)能電子集團有限公司	CEF02N6	CET	21+	TO-220F	865	原裝現(xiàn)貨假一賠十	詢價
深圳市國宇半導(dǎo)體科技有限公司	CEF02N6	C	23+	TO-220F	10000	公司只做原裝正品	詢價
深圳市威爾健半導(dǎo)體有限公司	CEF02N6	CET/華瑞	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市科恒偉業(yè)電子有限公司	CEF02N6	CET/華瑞	22+	TO-220	9800	只做原裝正品假一賠十!正規(guī)渠道訂貨!	詢價
深圳市匯萊威科技有限公司	CEF02N6		CET	TO-220F	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價
深圳市威雅利發(fā)展有限公司	CEF02N6	CET	804+	TO-220F	865	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價

更多CEF02N6供應(yīng)商更新時間2024-12-22 10:50:00

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