零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CEF80N15 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEF80N15 | N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
150VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導體深圳銳駿半導體股份有限公司 | RUICHIPS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導體深圳銳駿半導體股份有限公司 | RUICHIPS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導體深圳銳駿半導體股份有限公司 | RUICHIPS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
CET |
22+23+ |
TO-220F |
22679 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
CET |
24+ |
TO-220F |
9860 |
一級代理 |
詢價 | ||
CET |
2020+ |
TO-220F |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
CET |
21+ |
TO-220F |
6000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
CET/華瑞 |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
CET/華瑞 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CET/華瑞 |
2022+ |
TO-220F |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
CET |
23+ |
TO-220F |
6000 |
原裝正品,支持實單 |
詢價 | ||
CET |
17+ |
TO-220F |
3000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ir |
2023+ |
TO-220F |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
相關規(guī)格書
更多- CEF80N75
- CEF830G
- CEF840A
- CEF840G
- CEF840L
- CEF85N75
- CEF9060N
- CEF9060R
- CEFA101
- CEFA101-G
- CEFA102
- CEFA102-G
- CEFA103-G
- CEFA104
- CEFA104-G
- CEFA105-G
- CEFA201
- CEFA201-G
- CEFA202
- CEFA202-G
- CEFA203-G
- CEFB101
- CEFB101-G
- CEFB102
- CEFB102-G
- CEFB103-G
- CEFB104
- CEFB104-G
- CEFB105-G
- CEFB201
- CEFB201-G
- CEFB202
- CEFB202-G
- CEFB203-G
- CEFB204
- CEFB204-G
- CEFB205-G
- CEFC301
- CEFC301-G
- CEFC302
- CEFC302-G
- CEFC303-G
- CEFC304
- CEFC304-G
- CEFC305-G
相關庫存
更多- CEF830G
- CEF840A
- CEF840B
- CEF840G
- CEF85N75
- CEF860LT-G
- CEF9060N
- CEF90N15
- CEFA101-G
- CEFA101-G_12
- CEFA102-G
- CEFA103
- CEFA103-G
- CEFA104-G
- CEFA105
- CEFA105-G
- CEFA201-G
- CEFA201-G_12
- CEFA202-G
- CEFA203
- CEFA203-G
- CEFB101-G
- CEFB101-G_12
- CEFB102-G
- CEFB103
- CEFB103-G
- CEFB104-G
- CEFB105
- CEFB105-G
- CEFB201-G
- CEFB201-G_12
- CEFB202-G
- CEFB203
- CEFB203-G
- CEFB204-G
- CEFB205
- CEFB205-G
- CEFC301-G
- CEFC301-G_12
- CEFC302-G
- CEFC303
- CEFC303-G
- CEFC304-G
- CEFC305
- CEFC305-G