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RU80N15R

N-Channel Advanced Power MOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司

CEB80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP80N15

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEW80N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FTK80N15P

150VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

HM80N15

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS80N15

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS80N15D

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFH80N15Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas

IXYS

IXYS Corporation

IXFK80N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas

IXYS

IXYS Corporation

IXFR80N15Q

HiPerFETPowerMOSFETsISOPLUS247

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFT80N15Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas

IXYS

IXYS Corporation

RU80N15Q

N-ChannelAdvancedPowerMOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    RU80N15R

  • 制造商:

    RUICHIPS

  • 制造商全稱:

    RUICHIPS

  • 功能描述:

    N-Channel Advanced Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RUICHIPS專賣店
21+
TO-220
9926
全新原裝現(xiàn)貨假一罰十
詢價(jià)
RUICHIPS/銳駿
22+23+
TO-220
85192
RU代理假一賠十全新原裝現(xiàn)貨
詢價(jià)
銳俊
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
RUICHIPS銳駿
1948+
TO-220
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
銳俊
20+
TO-220
36900
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
銳俊
23+
TO-220
21000
公司只做原裝正品
詢價(jià)
銳俊
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
銳俊
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
RUICHIPS
2022+
TO-220
23648
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
銳俊
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
更多RU80N15R供應(yīng)商 更新時(shí)間2024-11-15 11:18:00