零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
RU80N15R | N-Channel Advanced Power MOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司 | RUICHIPS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
150VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ?Fas | IXYS IXYS Corporation | IXYS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司 | RUICHIPS |
詳細(xì)參數(shù)
- 型號(hào):
RU80N15R
- 制造商:
RUICHIPS
- 制造商全稱:
RUICHIPS
- 功能描述:
N-Channel Advanced Power MOSFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
RUICHIPS專賣店 |
21+ |
TO-220 |
9926 |
全新原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
RUICHIPS/銳駿 |
22+23+ |
TO-220 |
85192 |
RU代理假一賠十全新原裝現(xiàn)貨 |
詢價(jià) | ||
銳俊 |
18+ |
TO-220 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
RUICHIPS銳駿 |
1948+ |
TO-220 |
18562 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
銳俊 |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
銳俊 |
23+ |
TO-220 |
21000 |
公司只做原裝正品 |
詢價(jià) | ||
銳俊 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
銳俊 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
RUICHIPS |
2022+ |
TO-220 |
23648 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
銳俊 |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
相關(guān)規(guī)格書
更多- RU8-140-19-DP-H-DV
- RU8-140-19-DP-L-DV-K-TR
- RU8-140-19-DP-S-DV-K
- RU8-140-19-DP-S-DV-TR
- RU8-140-19-SE-H-DV
- RU8205G
- RU82566DC
- RU82566MC
- RU82566MM
- RU901T108
- RU9Z-PGPN10
- RU9Z-PWPN10
- RUA010M1HBK-0811S
- RUA010M1HTA-0811S
- RUA010M1JSA-0811S
- RUA100M1HBK-0811S
- RUA100M1HTA-0811S
- RUA100M1JSA-0811S
- RUA100M2DBK-1020S
- RUA100M2DTA-1020S
- RUAR47M1HBK-0811S
- RUAR47M1HTA-0811S
- RUAR47M1JSA-0811S
- RUB BO
- RUB002N05
- RUB111-05
- RUB507ZD
- RUB513ZD
- RUBAM-0020
- RUC002N05
- RUC002N05T116
- RUC101226
- RUC101246
- RUC101326
- RUC101346
- RUC102226
- RUC102246
- RUC102326
- RUC102346
- RUC105226
- RUC105246
- RUC105326
- RUC105346
- RUC130-M30-LIAP8X-H1151
- RUC-L
相關(guān)庫存
更多- RU8-140-19-DP-L-DV
- RU8-140-19-DP-S-DV
- RU8-140-19-DP-S-DV-K-TR
- RU8-140-19-DP-SM-DV
- RU8205C6
- RU821-16-02
- RU82566DM
- RU82566MC S L99J
- RU8H7R
- RU9Z-PAPN10
- RU9Z-PSPN10
- RU9Z-PYPN10
- RUA010M1HSA-0811S
- RUA010M1JBK-0811S
- RUA100M1HBK080115
- RUA100M1HSA-0811S
- RUA100M1JBK-0811S
- RUA100M1JTA-0811S
- RUA100M2DSA-1020S
- RUA100M2EBK-1020S
- RUAR47M1HSA-0811S
- RUAR47M1JBK-0811S
- RUAR47M1JTA-0811S
- RUB002N02
- RUB0D271MLG
- RUB506ZA
- RUB507ZE
- RUB541ZB
- RUBBER LIGHT 2AA
- RUC002N05_1006
- RUC101225
- RUC101245
- RUC101325
- RUC101345
- RUC102225
- RUC102245
- RUC102325
- RUC102345
- RUC105225
- RUC105245
- RUC105325
- RUC105345
- RUC130-M30-2AP8X-H1151
- RUC600-M3065-2AP8X-H1151
- RUC-LJ