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CEM8958A

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58m?@VGS=-10V. RDS(ON)=85m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM8958B

DualEnhancementModeFieldEffectTransistor(NandPChannel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM8958JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

CHENMKOchenmko

力勤股份有限公司

FDS8958

DualN&P-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDS8958A

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

FDS8958A

DualN&P-ChannelPowerTrenchOMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958A

DualNandP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958A

DualN&P-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8958B

DualN&P-ChannelPowerTrench?MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KDS8958

DualN&P-ChannelPowerTrenchMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

L8958

Highoutputpower:1.5mW,pigtailtype

Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會社

NDS8958

DualN&P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

QPB8958

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVO

Qorvo, Inc

QPB8958EVB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVO

Qorvo, Inc

QPB8958SB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVO

Qorvo, Inc

QPB8958SR

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVO

Qorvo, Inc

SDM8958

DualEnhancementModeFieldEffectTransistor(NandPChannel)

DualEnhancementModeFieldEffectTransistor(NandPChannel)

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SM8958

8-bitMicro-controllerwith32KFlashembedded

8-BitMicro-controllerwith32KBflashembedded

SyncMosSyncMOS Technologies,Inc

新茂新茂國際科技股份有限公司

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CET
24+
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SR
23+
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VBsemi
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20+
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63258
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VBsemi
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更多CEM8958A供應(yīng)商 更新時間2024-11-17 10:50:00

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