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CEU10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-8A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1185

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1188SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11P20

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V,-10.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. ComparabletoAEC-Q101.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU11P20

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-200V,-10.5A,RDS(ON)=0.36Ω@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU1210

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,62A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1210A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,53A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEU

  • 制造商：

    TDK

  • 制造商全稱(chēng)：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
23+
TO252
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
 詢(xún)價(jià)
CET
25+
SMD2
2218
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢(xún)!⊙
 詢(xún)價(jià)
CET
2020+
TO252
103
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
CET
13+
5171
原裝分銷(xiāo)
 詢(xún)價(jià)
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
CET
00+
SMD2
890
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢(xún)價(jià)
SR
23+
TO252
5000
原裝正品,假一罰十
 詢(xún)價(jià)
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢(xún)價(jià)
CET
24+
SMD2
4652
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢(xún)價(jià)
更多CEU供應(yīng)商 更新時(shí)間2025-4-22 10:50:00

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