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CEU3055L5

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,77A,RDS(ON)=6.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=8.5mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3070

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,62A,RDS(ON)=9.5mΩ@VGS=10V. RDS(ON)=13.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3080

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,57A,RDS(ON)=10m?@VGS=10V. RDS(ON)=14m?@VGS=4.5V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability Leadfreeproductisacquired. TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU30N08

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V,30A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=38mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-30A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU30P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-29A,RDS(ON)=55mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=60mW@VGS=-4.5V. Switchedmode

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
23+
TO252
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
CET
25+
SMD2
2218
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價(jià)
CET
2020+
TO252
103
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CET
13+
5171
原裝分銷
 詢價(jià)
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
CET
00+
SMD2
890
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
SR
23+
TO252
5000
原裝正品,假一罰十
 詢價(jià)
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
CET
24+
SMD2
4652
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
更多CEU供應(yīng)商 更新時(shí)間2025-4-23 16:36:00

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