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CEU50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU50N06G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-55V,-40A,RDS(ON)=23m?@VGS=-10V. RDS(ON)=28m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU51A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,35A,RDS(ON)=14m?(typ)@VGS=10V. RDS(ON)=21m?(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,25A,RDS(ON)=49m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,25A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,25A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,25A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU550

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,27A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
23+
TO252
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
CET
25+
SMD2
2218
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價(jià)
CET
2020+
TO252
103
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
CET
13+
5171
原裝分銷
 詢價(jià)
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
CET
00+
SMD2
890
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
SR
23+
TO252
5000
原裝正品,假一罰十
 詢價(jià)
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
CET
24+
SMD2
4652
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
更多CEU供應(yīng)商 更新時(shí)間2025-4-22 16:30:00

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