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CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3100

N-Channel MOSFET uses advanced trench technology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-35A,RDS(ON)=16mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=27mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3159

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=20mW@VGS=4.5V. -30V,-13A,RDS(ON)=32mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. TO-252-4Lpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3172

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價
TDK
18+
SMD
900000
優(yōu)勢貼片電容全新原裝進(jìn)口現(xiàn)貨歡迎咨詢
 詢價
CET
2020+
TO-252
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
24+
TO-252
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
CET
12
TO-252
6000
絕對原裝自己現(xiàn)貨
 詢價
VBsemi/臺灣微碧
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
CET
22+
TO-252
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
LB
2022
DIP8
2300
原裝現(xiàn)貨,誠信經(jīng)營!
 詢價
CET/華瑞
24+
TO-252
30980
原裝現(xiàn)貨/放心購買
 詢價
更多CEU供應(yīng)商 更新時間2025-4-23 11:04:00

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