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CEU4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,24A,RDS(ON)=28mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=42mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=46mW@VGS=4.5V. -40V,-12A,RDS(ON)=45mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V. TO-252-4Lpackage. Leadfreeproductisacquir

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-12A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
23+
TO252
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
CET
25+
SMD2
2218
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
CET
2020+
TO252
103
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
13+
5171
原裝分銷
 詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價
CET
00+
SMD2
890
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
SR
23+
TO252
5000
原裝正品,假一罰十
 詢價
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
CET
24+
SMD2
4652
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
更多CEU供應(yīng)商 更新時間2025-4-22 16:30:00

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