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CEU6086

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6086

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU60P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6185

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-36A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=26mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6186

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,28A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6186A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6196

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,28.8A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=30mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU61A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,45A,RDS(ON)=14m?@VGS=4.5V. RDS(ON)=24m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU62A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,48A,RDS(ON)=12m?@VGS=4.5V. RDS(ON)=17m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU630N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V,7.5A,RDS(ON)=0.36W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應商型號品牌批號封裝庫存備注價格
CET
23+
TO252
7000
絕對全新原裝!100%保質量特價!請放心訂購!
 詢價
CET
25+
SMD2
2218
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
CET
2020+
TO252
103
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
13+
5171
原裝分銷
 詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價
CET
00+
SMD2
890
全新原裝100真實現(xiàn)貨供應
 詢價
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
SR
23+
TO252
5000
原裝正品,假一罰十
 詢價
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
CET
24+
SMD2
4652
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多CEU供應商 更新時間2025-4-22 16:30:00

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