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CEU73A3G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,57A,RDS(ON)=9m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU740A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V,9A,RDS(ON)=0.55W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU75A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU75A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU830A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU83A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU83A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU83A3G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價
CET
2020+
TO-252
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
24+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET
12
TO-252
6000
絕對原裝自己現(xiàn)貨
 詢價
CET
22+
TO-252
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
LB
2022
DIP8
2300
原裝現(xiàn)貨,誠信經(jīng)營!
 詢價
CET/華瑞
新年份
TO-252
65890
一級代理原裝正品現(xiàn)貨,支持實單!
 詢價
CET
2023+
SOT-252
5800
進口原裝,現(xiàn)貨熱賣
 詢價
華瑞
23+
SOT-252
8000
正品原裝貨價格低
 詢價
更多CEU供應(yīng)商 更新時間2025-4-23 11:04:00

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