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CEU655

N-Channel 200 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEU65P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-65A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. RDS(ON)=12mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6659

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 60V,9A,RDS(ON)=72mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=90mW@VGS=5V. -60V,-6A,RDS(ON)=125mW@VGS=10V. RDS(ON)=150mW@VGS=5V. TO-252-4Lpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6861

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-12A,RDS(ON)=132mΩ@VGS=-10V. RDS(ON)=195mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6961

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-13.2A,RDS(ON)=110mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=150mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU703AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU73A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,65A,RDS(ON)=7.8m?(typ)@VGS=10V. RDS(ON)=10m?(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEU

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
CET
24+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET
22+
TO-252
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
CET
2023+
SOT-252
5800
進口原裝,現(xiàn)貨熱賣
 詢價
CET/華瑞
2023+
TO-252
100000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
TDK
18+
SMD
900000
優(yōu)勢貼片電容全新原裝進口現(xiàn)貨歡迎咨詢
 詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
 詢價
VBSEMI/微碧半導(dǎo)體
24+
TO252
48000
可完美替代進口 微碧原裝可長久大量供應(yīng)
 詢價
CET
2020+
TO-252
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
VBsemi/臺灣微碧
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
更多CEU供應(yīng)商 更新時間2025-4-23 11:04:00

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