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CEU6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM6601JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

CJL6601

P-channelandN-channelComplementaryMOSFETS

ZPSEMI

ZP Semiconductor

CJQ6601

N-channelandP-channelComplementaryMOSFETS

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

DMG6601LVT

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMG6601LVT

NandP-ChannelEnhancementModePowerMOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

E6601A

CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

EFC6601R

Lithium-ionbatterycharginganddischargingswitch

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

SANYOSanyo

三洋三洋電機株式會社

EFC6601R

N-ChannelPowerMOSFET

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

ONSEMION Semiconductor

安森美半導體安森美半導體公司

EFC6601R-TR

N-ChannelPowerMOSFET

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FP6601Q

USBDedicatedChargingPortControllerforFastChargingProtocolandQC2.0/3.0

FITIPOWERFitipower Integrated Technology Inc.

天鈺科技天鈺科技股份有限公司

FTK6601S

P-channelandN-channelComplementaryMOSFETS

FS

First Silicon Co., Ltd

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Intersil

Intersil Corporation

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Synchronous-RectifiedBuckMOSFETDrivers TheHIP6601andHIP6603arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopower N-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP630xMulti-PhaseBuckPWMcontrollera

Intersil

Intersil Corporation

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Features ?DrivesTwoN-ChannelMOSFETs ?AdaptiveShoot-ThroughProtection ?InternalBootstrapDevice ?SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns ?Small8LeadSOICPackage ?DualGate-DriveVoltagesforOptimalEfficiency ?Three-StateInputfo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HIP6601A

SynchronousRectifiedBuckMOSFETDrivers

TheHIP6601A,HIP6603AandHIP6604arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxoranISL65xxMulti-PhaseBuckPWMcontrollerformacompletecore-voltage

Intersil

Intersil Corporation

HIP6601A

SynchronousRectifiedBuckMOSFETDrivers

Features ?DrivesTwoN-ChannelMOSFETs ?AdaptiveShoot-ThroughProtection ?InternalBootstrapDevice ?SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns ?Small8LeadSOICandEPSOICand16LeadQFN Packages ?DualGate-DriveVoltagesforOptimalEffic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HIP6601ACB

SynchronousRectifiedBuckMOSFETDrivers

TheHIP6601A,HIP6603AandHIP6604arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxoranISL65xxMulti-PhaseBuckPWMcontrollerformacompletecore-voltage

Intersil

Intersil Corporation

HIP6601ACB

SynchronousRectifiedBuckMOSFETDrivers

Features ?DrivesTwoN-ChannelMOSFETs ?AdaptiveShoot-ThroughProtection ?InternalBootstrapDevice ?SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns ?Small8LeadSOICandEPSOICand16LeadQFN Packages ?DualGate-DriveVoltagesforOptimalEffic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
23+
TO-252
20000
原裝正品 歡迎咨詢
 詢價
SR
23+
TO-252-2
5000
原裝正品,假一罰十
 詢價
CET
2020+
TO-252
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
23+
TO-252
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
SOT-252
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
CET
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
VBsemi
2020+
TO-252-
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET原廠
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
CET(華瑞)
2112+
TO-252-2(DPAK)
105000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
更多CEU6601A供應商 更新時間2024-11-18 10:59:00

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