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CEU6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6601

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEU6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM6601JPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

CJL6601

P-channelandN-channelComplementaryMOSFETS

ZPSEMI

ZP Semiconductor

CJQ6601

N-channelandP-channelComplementaryMOSFETS

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

DMG6601LVT

COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMG6601LVT

NandP-ChannelEnhancementModePowerMOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

E6601A

CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

EFC6601R

Lithium-ionbatterycharginganddischargingswitch

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

EFC6601R

N-ChannelPowerMOSFET

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EFC6601R-TR

N-ChannelPowerMOSFET

Features ?2.5Vdrive ?Protectiondiodein ?Common-draintype ?Halogenfreecompliance ?2KVESDHBM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FP6601Q

USBDedicatedChargingPortControllerforFastChargingProtocolandQC2.0/3.0

FITIPOWERFitipower Integrated Technology Inc.

天鈺科技天鈺科技股份有限公司

FTK6601S

P-channelandN-channelComplementaryMOSFETS

FS

First Silicon Co., Ltd

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Intersil

Intersil Corporation

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Synchronous-RectifiedBuckMOSFETDrivers TheHIP6601andHIP6603arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopower N-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP630xMulti-PhaseBuckPWMcontrollera

Intersil

Intersil Corporation

HIP6601

Synchronous-RectifiedBuckMOSFETDrivers

Features ?DrivesTwoN-ChannelMOSFETs ?AdaptiveShoot-ThroughProtection ?InternalBootstrapDevice ?SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns ?Small8LeadSOICPackage ?DualGate-DriveVoltagesforOptimalEfficiency ?Three-StateInputfo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HIP6601A

SynchronousRectifiedBuckMOSFETDrivers

TheHIP6601A,HIP6603AandHIP6604arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxoranISL65xxMulti-PhaseBuckPWMcontrollerformacompletecore-voltage

Intersil

Intersil Corporation

HIP6601A

SynchronousRectifiedBuckMOSFETDrivers

Features ?DrivesTwoN-ChannelMOSFETs ?AdaptiveShoot-ThroughProtection ?InternalBootstrapDevice ?SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns ?Small8LeadSOICandEPSOICand16LeadQFN Packages ?DualGate-DriveVoltagesforOptimalEffic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    CEU6601

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    P-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
24+
TO-252
2160
只做原廠渠道 可追溯貨源
 詢價(jià)
CET/華瑞
24+
TO-252
499574
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
CET/華瑞
23+
TO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
 詢價(jià)
SR
23+
TO-252-2
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
TO252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
CET
19+
TO-252
67813
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
CET
23+
TO-252
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET
20+
TO-252
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
CET
2020+
TO-252
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
CET
21+
TO-252
35200
一級代理/放心采購
 詢價(jià)
更多CEU6601供應(yīng)商 更新時(shí)間2024-12-22 16:36:00

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