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CEU04N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■600V,3.4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU04N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N6

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU04N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU04N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU04N65

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

04N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.5A,RDS(ON)=2.5?@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandlingcapability. TO-220Ffull-pakforthroughhole

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB04N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB04N6

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
22+
TO252
50000
一級(jí)代理,放心購買!
 詢價(jià)
CET
22+
TO-252
159353
原裝正品現(xiàn)貨,可開13個(gè)點(diǎn)稅
 詢價(jià)
CET/華瑞
23+
NA/
2500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
CET/華瑞
23+
TO-252
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CET
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
CET
24+
TO-252
35200
一級(jí)代理/放心采購
 詢價(jià)
CET
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
CET
15+PBF
TO-252
20000
現(xiàn)貨
 詢價(jià)
CET
21+
TO-252
20000
原裝現(xiàn)貨假一賠十
 詢價(jià)
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多CEU04N6供應(yīng)商 更新時(shí)間2025-2-8 9:04:00

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