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CEU20P06

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-13A,RDS(ON)=105m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU20P06

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM20P06PAPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

EMB20P06A

P??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

G20P06K

P-ChannelEnhancementModePowerMOSFET

Description TheG20P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G20P06KA

P-ChannelEnhancementModePowerMOSFET

Description TheG20P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeused inawidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

ME20P06

P-ChannelEnhancementModeMOSFET

Features *Vos=-60V,lo=-16A Ros52mQ@Vos=-10V(Typ)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

ME20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTD20P06

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTD20P06

TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    CEU20P06

  • 制造商：

    CET

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
24+
TO-252
1510
只做原廠渠道 可追溯貨源
 詢價
CET
19+
TO-252
7500
只做原裝正品
 詢價
CET/華瑞
25+
TO-252
156684
明嘉萊只做原裝正品現(xiàn)貨
 詢價
CET
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
SR
23+
TO-252-2
5000
原裝正品,假一罰十
 詢價
CET
19+
TO-252
67806
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
CET
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
CET
24+
TO-252
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
20+
TO-252
63258
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
CET
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多CEU20P06供應(yīng)商 更新時間2025-3-30 16:36:00

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