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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEU4	文件：60.69 Kbytes Page：5 Pages	Multilayer Ceramic Chip Capacitors	TDKTDK Corporation TDK株式會(huì)社東電化（中國）投資有限公司	TDK
CEU4060A	文件：121.95 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4060A	文件：454.51 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4060AL	文件：117.33 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,15A,RDS(ON)=80m?@VGS=10V. RDS(ON)=95m?@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4060AL	文件：471.04 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU40N10	文件：423.21 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU40N10	文件：608.59 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU40N20	文件：531.53 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V,40A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4112A	文件：411.69 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V,47A,RDS(ON)=10.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4175	文件：516.72 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V,-31A,RDS(ON)=18.5mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=25mW@VGS=-4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU41A2	文件：186.13 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■20V,36A,RDS(ON)=20m?@VGS=4.5V. RDS(ON)=30m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4201	文件：422.09 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-40V,-28A,RDS(ON)=26mΩ@VGS=-10V. RDS(ON)=36mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4204	文件：389.75 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■40V,24A,RDS(ON)=30mW@VGS=10V.RDS(ON)=45mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4204	文件：609.74 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V,24A,RDS(ON)=28mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=42mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4269	文件：633.12 Kbytes Page：7 Pages	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-12A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4269	文件：804.63 Kbytes Page：7 Pages	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=46mW@VGS=4.5V. -40V,-12A,RDS(ON)=45mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V. TO-252-4Lpackage. Leadfreeproductisacquir	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4279	文件：685.37 Kbytes Page：7 Pages	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4279	文件：800.6 Kbytes Page：7 Pages	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU4301	文件：415.28 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU4301	文件：631.68 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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詳細(xì)參數(shù)

型號(hào)：
CEU4
制造商：
TDK
制造商全稱：
TDK Electronics
功能描述：
Multilayer Ceramic Chip Capacitors

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市毅創(chuàng)騰電子科技有限公司	CEU4060AL	CET	23+	TO252	7000	絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購!	詢價(jià)
深圳市凌旭科技有限公司	CEU4301	CET	2016+	TO-252	3000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市勤思達(dá)科技有限公司	CEU4311	CET	12+	TO-252	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市一線半導(dǎo)體有限公司	CEU4060A	CET	24+	TO252	3068		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	CEU4311	SR	23+	TO-252-2	5000	原裝正品,假一罰十	詢價(jià)
深圳市鵬和科技有限公司	CEU4204	CET	24+	TO-252	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳宇航軍工半導(dǎo)體有限公司	CEU4311	CETSEMI	19+	TO-252	67810	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價(jià)
深圳市佳鑫美電子科技有限公司	CEU4060AL	CET	24+	TO-252	2800	原裝現(xiàn)貨!可長期供貨!	詢價(jià)
深圳市華斯頓科技有限公司	CEU4060A	CET	22+23+	TO-252	46726	絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市宇集芯電子有限公司	CEU41A2	CET	24+	TO-252	90000	進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理	詢價(jià)

更多CEU4供應(yīng)商更新時(shí)間2025-1-3 16:30:00

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