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CEU41A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,36A,RDS(ON)=20m?@VGS=4.5V. RDS(ON)=30m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4201

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-28A,RDS(ON)=26mΩ@VGS=-10V. RDS(ON)=36mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,24A,RDS(ON)=30mW@VGS=10V.RDS(ON)=45mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,24A,RDS(ON)=28mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=42mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-12A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=46mW@VGS=4.5V. -40V,-12A,RDS(ON)=45mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V. TO-252-4Lpackage. Leadfreeproductisacquir

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    CEU4

  • 制造商：

    TDK

  • 制造商全稱：

    TDK Electronics

  • 功能描述：

    Multilayer Ceramic Chip Capacitors

供應商型號品牌批號封裝庫存備注價格
CET
23+
TO252
7000
絕對全新原裝!100%保質量特價!請放心訂購!
 詢價
CET
2016+
TO-252
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
CET
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
CET
24+
TO252
3068
詢價
SR
23+
TO-252-2
5000
原裝正品,假一罰十
 詢價
CET
24+
TO-252
5000
只做原裝公司現(xiàn)貨
 詢價
CETSEMI
19+
TO-252
67810
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
CET
24+
TO-252
2800
原裝現(xiàn)貨!可長期供貨!
 詢價
CET
25+23+
TO-252
46726
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
CET
24+
TO-252
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
更多CEU4供應商 更新時間2025-4-22 10:50:00

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