CGHV96050F2開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

CGHV96050F2屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由WOLFSPEED, INC.制造生產(chǎn)的CGHV96050F2射頻評估和開發(fā)套件，開發(fā)板本系列中的產(chǎn)品適用于在已知實施環(huán)境中，提供能訪問射頻相關器件的功能或者有助于訪問該功能。所含的焦點產(chǎn)品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問用戶單獨提供的特定射頻產(chǎn)品或系列。

Description

Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent

power added efficiency in comparison to other technologies. GaN has superior properties

compared to silicon or gallium arsenide, including higher breakdown voltage, higher

saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to GaAs transistors. This IM FET is

available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features

? 8.4 - 9.6 GHz Operation

? 80 W POUT typical

? 10 dB Power Gain

? 55 Typical PAE

? 50 Ohm Internally Matched

? <0.1 dB Power Droop

Applications

? Marine Radar

? Weather Monitoring

? Air Traffic Control

? Maritime Vessel Traffic Control

? Port Security