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首頁 >CIL21N100MBC>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CIL21N100MBC	文件：67.43 Kbytes Page：7 Pages	It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
CIL21N100MBE	文件：67.43 Kbytes Page：7 Pages	Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
CIL21N100MNC	文件：67.43 Kbytes Page：7 Pages	Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
CIL21N100MNE	文件：67.43 Kbytes Page：7 Pages	Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
IXFK21N100F	文件：101.09 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D	IXYS IXYS Corporation	IXYS
IXFK21N100F	文件：328.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK21N100F	文件：98.84 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D	IXYS IXYS Corporation	IXYS
IXFK21N100Q	文件：328.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK21N100Q	文件：606.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-CLASS HiPerFET?PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on	IXYS IXYS Corporation	IXYS
IXFN21N100Q	文件：135.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQ-Class SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Int	IXYS IXYS Corporation	IXYS
IXFN21N100Q	文件：533.46 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·Switchingapplication ·DC-DCconverters ·Batterychargers	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR21N100	文件：329.37 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR21N100Q	文件：38.01 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface)	IXYS IXYS Corporation	IXYS
IXFX21N100	文件：367.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX21N100F	文件：101.09 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D	IXYS IXYS Corporation	IXYS
IXFX21N100F	文件：98.84 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D	IXYS IXYS Corporation	IXYS
IXFX21N100Q	文件：606.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-CLASS HiPerFET?PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on	IXYS IXYS Corporation	IXYS
IXTK21N100	文件：137.16 Kbytes Page：4 Pages	HighVoltageMegaMOSTMFETs Features ?Internationalstandardpackages ?JEDECTO-264,epoxymeetUL94V-0flammabilityclassification ?miniBLOC,(ISOTOP-compatible)withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance Applications ?DC-DCconver	IXYS IXYS Corporation	IXYS
IXTN21N100	文件：137.16 Kbytes Page：4 Pages	HighVoltageMegaMOSTMFETs Features ?Internationalstandardpackages ?JEDECTO-264,epoxymeetUL94V-0flammabilityclassification ?miniBLOC,(ISOTOP-compatible)withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance Applications ?DC-DCconver	IXYS IXYS Corporation	IXYS

詳細(xì)參數(shù)

型號：
CIL21N100MBC
功能描述：
It has ferrite and 100% Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	CIL21N1R8KNE		24+		92000		詢價(jià)
深圳市振宏微科技有限公司	CIL21N1R8KNE	Samsung	23+	SMD	9868	專做原裝正品,假一罰百!	詢價(jià)
深圳市匯萊威科技有限公司	CIL21N47NK	SAMSUNG/三星	24+	SMD	68900	一站配齊原盒原包現(xiàn)貨朱S Q2355605126	詢價(jià)
深圳兆威電子有限公司	CIL21N47NKNC	SAMSUNG/三星	22+	SMD	96000	原裝現(xiàn)貨樣品可售	詢價(jià)
深圳市凌旭科技有限公司	CIL21N47NKNE	SAMSUNG	2016+	SMD	4000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳宇航軍工半導(dǎo)體有限公司	CIL21N47NKNE	Samsung	19+	O805	67882	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價(jià)
深圳市華斯頓科技有限公司	CIL21N47NKNE	三星	22+23+	0805	61845	絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
瀚佳科技(深圳)有限公司	CIL21N47NKNE	原裝正品	17+	NA	66300	一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!	詢價(jià)
深圳市科雨電子有限公司	CIL21N47NKNE	SAMSUNG	20+	電感器	120000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	CIL21N47NKNE	SAMSUNG/三星	23+	0805	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)

更多CIL21N100MBC供應(yīng)商更新時(shí)間2024-11-18 10:50:00

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