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MME60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MME60R290PRH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MME60R290QRH

600V0.29ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMP60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Cmos/鍦烘晥搴斿崐瀵間綋
23
TO-220F
100000
N鍦?
 詢價
24+
N/A
58000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Tamura
24+
垂直式 4 PC 引腳
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多CMF60R290Q供應(yīng)商 更新時間2024-12-30 8:01:00

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