CMPA2560025F開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

CMPA2560025F屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由WOLFSPEED, INC.制造生產(chǎn)的CMPA2560025F射頻評估和開發(fā)套件，開發(fā)板本系列中的產(chǎn)品適用于在已知實施環(huán)境中，提供能訪問射頻相關器件的功能或者有助于訪問該功能。所含的焦點產(chǎn)品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問用戶單獨提供的特定射頻產(chǎn)品或系列。

Description

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs also

offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier enabling very wide bandwidths to be achieved in a small

footprint screw-down package featuring a Copper-Tungsten heat-sink.

Features

? 24 dB Small Signal Gain

? 25 W Typical PSAT

? Operation up to 28 V

? High Breakdown Voltage

? High Temperature Operation

Applications

? Ultra Broadband Amplifiers

? Fiber Drivers

? Test Instrumentation

? EMC Amplifier Drivers