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CMPA2735030D規(guī)格書(shū)詳情
Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity
and higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC contains a two-stage reactively matched amplifier design approach enabling
very wide bandwidths to be achieved.
Features
? 35 dB Small Signal Gain
? 40 W Typical PSAT
? Operation up to 50 V
? High Breakdown Voltage
? High Temperature Operation
? Size 0.130 x 0.08 x 0.004 inches
Applications
? Civil and Military Pulsed Radar Amplifiers
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Cree |
24+ |
SMD |
9856 |
全新原裝現(xiàn)貨/假一罰百! |
詢(xún)價(jià) | ||
CREE |
三年內(nèi) |
1983 |
只做原裝正品 |
詢(xún)價(jià) | |||
CREE |
638 |
原裝正品 |
詢(xún)價(jià) | ||||
Cree |
23+ |
SMD |
5000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
CREE/科銳 |
2021+ |
20 |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
QORVO |
24+ |
SMD |
5000 |
QORVO“芯達(dá)集團(tuán)”專(zhuān)營(yíng)品牌原裝正品假一罰十 |
詢(xún)價(jià) | ||
MAXIM/美信 |
專(zhuān)業(yè)軍工 |
NA |
1000 |
只做原裝正品軍工級(jí)部分訂貨 |
詢(xún)價(jià) | ||
Cree |
2023+ |
SMD |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
CREE/科銳 |
21+ |
BGA |
13880 |
公司只售原裝,支持實(shí)單 |
詢(xún)價(jià) | ||
Wolfspeed |
22+ |
Tube |
5710 |
只做原裝進(jìn)口貨 |
詢(xún)價(jià) |
