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CMUT5401

PNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5401typeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKINGCODE:4C5

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CMUT5401E

ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5401EisaPNPSiliconTransistor,packagedinanSOT-523case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltageandsmallspacesavingpackaging. MARKINGCODE:4C5 FEATURES: ?HighCollectorBreakdownVoltage250V

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CXT5401

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5401typeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CXT5401

PNPPlastic-EncapsulateTransistors

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?SwitchingandamplificationinhighvoltageApplicationssuchastelephony ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

CXT5401

TRANSISTOR(PNP)

FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.500mA) Highvoltage(max.160v)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

CXT5401

SOT-89-3LPlastic-EncapsulateTransistors

FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.500mA) Highvoltage(max.160v)

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

CXT5401

SurfaceMountPNPSiliconTransistor

Features ●Highcurrent(max.500mA). ●Lowvoltage(max.150V).

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

CXT5401

SurfaceMountPNPSiliconTransistor

FEATURES ●Switchingandamplificationinhighvoltage. ●Lowcurrent(max.600mA) ●Highvoltage(max.180V) APPLICATIONS ●Highvoltageamplifierapplication.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

CXT5401

Plastic-EncapsulateTransistors

FEATURES ?SwitchingandamplificationinhighvoltageApplicationssuchastelephony ?Lowcurrent(max.500mA) ?Highvoltage(max.160v)

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

CXT5401

PNPPlastic-EncapsulateTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

CXT5401E

ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5401EisaPNPSiliconTransistor,packagedinanSOT-89case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. FEATURES: ?HighCollectorBreakdownVoltage250V ?LowLeakageCurrent50nAMax ?LowSaturationVolt

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CZT5401

PNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401typeisanPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

CZT5401

PNPSiliconTransistor

PNPSiliconTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

CZT5401

EpitaxialPlanarTransistor

Description TheCZT5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

CZT5401

SOT-223Plastic-EncapsulateTransistors

FEATURES HighVoltage HighVoltageAmplifierApplication

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

CZT5401

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:-0.6A Collector-basevoltageV(BR)CBO:-160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

CZT5401E

ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401EisaPNPSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKING:FULLPARTNUMBER FEATURES: ?HighCollectorBreakdownVoltage250V ?LowLeakageCurrent50n

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

DM5401

Quad2-InputNANDGateswithOpen-CollectorOutputs

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

DMBT5401

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5401

MATCHEDPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?BVCEO>-150V ?IC=-200mAHighCollectorCurrent ?PairofPNPTransistorsthatareIntrinsicallyMatched(Note1) ?2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) ?IdealforMediumPowerAmplificationandSwitching ?FullyInternallyIsolatedinaSmallSurfaceMountPackage ?

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號(hào)：

    CMPT5401TR PBFREE

  • 制造商：

    Central Semiconductor Corp

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Central Semiconductor
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CentralSemi
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CENTRAL
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更多CMPT5401TR PBFREE供應(yīng)商 更新時(shí)間2024-12-26 17:23:00

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