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CMXD2004

SUPER-MINITRIPLEISOLATEDSURFACEMOUNTHIGHVOLTAGESWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004typecontainsthree(3)IsolatedHighVoltageSiliconSwitchingDiodes,manufacturedbytheepitaxialplanarprocess,epoxymoldedinaSUPERmini?surfacemountpackage,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMXD2004S

SURFACEMOUNTSUPERminiDUAL,IN-SERIESHIGHVOLTAGESWITCHINGDIODES

DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004SandCMXD2004SRconsistsofdual,in-seriespairsofhighvoltagesiliconswitchingdiodes,manufacturedinaSUPERmini?SOT-26surfacemountpackage,anddesignedforhighvoltageswitchingapplications.Thisdevicecanbeconfiguredasa1200Vswi

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMXD2004S

SURFACEMOUNTDUALPAIR,IN-SERIESHIGHVOLTAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMXD2004SR

SURFACEMOUNTSUPERminiDUAL,IN-SERIESHIGHVOLTAGESWITCHINGDIODES

DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004SandCMXD2004SRconsistsofdual,in-seriespairsofhighvoltagesiliconswitchingdiodes,manufacturedinaSUPERmini?SOT-26surfacemountpackage,anddesignedforhighvoltageswitchingapplications.Thisdevicecanbeconfiguredasa1200Vswi

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMXD2004SR

SURFACEMOUNTDUALPAIR,IN-SERIESHIGHVOLTAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMXD2004TO

SUPERminiTMTRIPLEISOLATEDOPPOSINGSURFACEMOUNTHIGHVOLTAGESWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD2004TOconsistsofthree(3)IsolatedHighVoltageSiliconSwitchingDiodesarrangedinanalternatingconfigurationinaSUPERminiSOT-26surfacemountpackage,anddesignedforhighvoltageswitchingapplications.Thisdevicecanbeconfiguredasa900

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

D2004UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?HF/VHF/UHFCOMMUNICATIONSfromDCto2

SEME-LAB

Seme LAB

DG2004

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DMC2004DWK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am

DIODES

Diodes Incorporated

DMC2004LPK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMC2004VK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?LoadSwitch Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGate

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004DWKQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance:RDS(on)=550(max)m?@VGS=4.5V

DIODES

Diodes Incorporated

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Central Semiconductor Corp
24+
SC-70,SOT-323
30000
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CENTRAL
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con
10750
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CENTRAL SEMICONDUCTOR CORP
20
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Central Semiconductor Corp
24+
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9350
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INFINEON
24+
SMD
94
C23-電容器
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CENTRAL SEMICONDUCTOR CORP
24+
con
10
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
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CENTRAL
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12000
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CENTRAL
23+
SOT-323
63000
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CENTRAL
1809+
SOT-323
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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Central Semiconductor Corp
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SOT323
9000
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更多CMSD2004STRPBFREE供應(yīng)商 更新時(shí)間2025-1-19 14:14:00

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