零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
D2004UK | METAL GATE RF SILICON FET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?HF/VHF/UHFCOMMUNICATIONSfromDCto2 | SEME-LAB Seme LAB | SEME-LAB | |
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?LoadSwitch Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGate | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance:RDS(on)=550(max)m?@VGS=4.5V | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”D | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedupto2KV ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
詳細(xì)參數(shù)
- 型號:
D2004UK
- 制造商:
TT Electronics/Semelab
- 功能描述:
RF POWER TRANSISTOR MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SEMELAB |
24+ |
SMD |
5500 |
長期供應(yīng)原裝現(xiàn)貨實(shí)單可談 |
詢價 | ||
SEMELAB |
24+ |
237 |
現(xiàn)貨供應(yīng) |
詢價 | |||
SEMELAB |
23+ |
N/A |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SEMELAB |
1231+ |
N/A |
21 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SEMELAB |
NA |
5500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SEMELAB |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
羅姆 |
24+ |
TO92LM |
14000 |
詢價 | |||
POINT |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
20000 |
全新原裝現(xiàn)貨 樣品可售 |
詢價 | |||||
EPCOS |
24+ |
QFN |
2600 |
原裝現(xiàn)貨假一賠十 |
詢價 |
相關(guān)規(guī)格書
更多- D2005
- D2005UK
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相關(guān)庫存
更多- D-200-5
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