CY62136VSL-70ZSI中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description[1]

The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80 when addresses are not toggling.

Features

? Very high speed: 55 ns and 70 ns

? Voltage range:

— CY62136CV30: 2.7V–3.3V

— CY62136CV33: 3.0V–3.6V

— CY62136CV: 2.7V–3.6V

? Pin-compatible with the CY62136V

? Ultra-low active power

— Typical active current: 1.5 mA @ f = 1 MHz

— Typical active current: 5.5 mA @ f = fmax (70-ns speed)

? Low standby power

? Easy memory expansion with CE and OE features

? Automatic power-down when deselected

? CMOS for optimum speed/power

? Packages offered in a 48-ball FBGA