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CY7C25632KV18-500BZXC集成電路(IC)的存儲器規(guī)格書PDF中文資料

CY7C25632KV18-500BZXC
廠商型號

CY7C25632KV18-500BZXC

參數(shù)屬性

CY7C25632KV18-500BZXC 封裝/外殼為165-LBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

封裝外殼

165-LBGA

文件大小

496.32 Kbytes

頁面數(shù)量

31

生產廠商 CypressSemiconductor
企業(yè)簡稱

Cypress賽普拉斯

中文名稱

賽普拉斯半導體公司官網

原廠標識
數(shù)據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-21 17:02:00

CY7C25632KV18-500BZXC規(guī)格書詳情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

? Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

? SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

? Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR? II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

? Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

產品屬性

  • 產品編號:

    CY7C25632KV18-500BZXC

  • 制造商:

    Cypress Semiconductor Corp

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 同步,QDR II+

  • 存儲容量:

    72Mb(4M x 18)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-LBGA

  • 供應商器件封裝:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供應商 型號 品牌 批號 封裝 庫存 備注 價格
CYPRESS/賽普拉斯
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
詢價
CYPRESS/賽普拉斯
23+
NA/
394
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
CYPRESS(賽普拉斯)
23+
LBGA165
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
詢價
22+
5000
詢價
Cypress
165-FBGA
3200
Cypress一級分銷,原裝原盒原包裝!
詢價
CYPRESS/賽普拉斯
23+
FBGA165
6861
原裝正品代理渠道價格優(yōu)勢
詢價
CYPRESS/賽普拉斯
24+
FBGA165
58000
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
詢價
CYPRESS
22+
FBGA
10000
原裝正品優(yōu)勢現(xiàn)貨供應
詢價
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
ADI
23+
BGA
7000
詢價