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CY7C25652KV18-550BZC集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

CY7C25652KV18-550BZC
廠商型號(hào)

CY7C25652KV18-550BZC

參數(shù)屬性

CY7C25652KV18-550BZC 封裝/外殼為165-LBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

封裝外殼

165-LBGA

文件大小

496.32 Kbytes

頁(yè)面數(shù)量

31 頁(yè)

生產(chǎn)廠商 CypressSemiconductor
企業(yè)簡(jiǎn)稱

Cypress賽普拉斯

中文名稱

賽普拉斯半導(dǎo)體公司官網(wǎng)

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更新時(shí)間

2025-1-16 17:35:00

CY7C25652KV18-550BZC規(guī)格書詳情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

? Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

? SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

? Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR? II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

? Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    CY7C25652KV18-550BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,QDR II+

  • 存儲(chǔ)容量:

    72Mb(2M x 36)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-LBGA

  • 供應(yīng)商器件封裝:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Cypress(賽普拉斯)
2324+
NA
78920
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口
詢價(jià)
Cypress
23+
165-FBGA(13x15)
9550
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
Infineon Technologies
23+/24+
165-LBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
CYPRESS/賽普拉斯
23+
FBGA165
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢價(jià)
Cypress
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價(jià)
CYP
1728+
4684
詢價(jià)
Cypress
21+
165FBGA (13x15)
13880
公司只售原裝,支持實(shí)單
詢價(jià)
CYPRESS
23+
BGA-165
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
CYPRESS/賽普拉斯
23+
FBGA165
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
CYPRESS SEMICONDUCTOR/賽普拉斯
兩年內(nèi)
N/A
115
原裝現(xiàn)貨,實(shí)單價(jià)格可談
詢價(jià)