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EMB12N06CS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB12N06G

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD12N06A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)12mΩ ID48A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD12N06H

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)12mΩ ID48A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FIR12N06PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FTP12N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IXTU12N06T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTU12N06T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTY12N06T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTY12N06T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP12N06

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP12N06EZL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RFD12N06

60VN-ChannelMOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號:

    D12N06L

  • 制造商:

    STME

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
TO-252
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
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ST
2023+環(huán)保現(xiàn)貨
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10000
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N
23+
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10000
公司只做原裝正品
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N
TO-252
22+
6000
十年配單,只做原裝
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N
23+
TO-252
8400
專注配單,只做原裝進口現(xiàn)貨
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N
23+
TO-252
8400
專注配單,只做原裝進口現(xiàn)貨
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N
24+
TO-252
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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原裝正品
23+
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63107
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ST
22+
TO-252
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
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ST/意法
22+
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99484
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更多D12N06L供應(yīng)商 更新時間2025-1-9 16:17:00