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DS606

SuperfastRecoveryRectitiers

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

DTA606

BiasResistorTransistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

FS

First Silicon Co., Ltd

ED606CS

DPAKSURFACEMOUNTSUPERFASTRECOVERYRECTIFIER(VOLTAGE-200to600VoltsCURRENT-6.0Amperes)

VOLTAGE200to600VoltsCURRENT6.0Amperes FEATURES ?Superfastrecoverytimes-epitaxialconstruction. ?Lowforwardvoltage,highcurrentcapability. ?ExceedsenvironmentalstandardsofMIL-S-19500/228. ?Hermeticallysealed. ?Lowleakage. ?Highsurgecapability. ?Plasticpackageha

PANJITPan Jit International Inc.

強茂股份有限公司

ED606CS

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

ED606CS

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

ED606CT

SUPERFASTRECOVERYRECTIFIER(VOLTAGE-200to600VoltsCURRENT-6.0Amperes)

SUPERFASTRECOVERYRECTIFIER VOLTAGE-200to600VoltsCURRENT-6.0Amperes FEATURES ?Forthoroughholeapplications ?Lowprofilepackage ?Built-instrainrelief ?Easypickandplace ?Superfastrecoverytimesforhighefficiency ?PlasticpackagehasUnderwriters

PANJITPan Jit International Inc.

強茂股份有限公司

ED606CT

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

ED606CT

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強茂股份有限公司

EL606A

GENERALPURPOSE1FORMASOLIDSTATERELAY6PINDIPTYPEFORMASSR

EverlightEverlight Electronics Co., Ltd

臺灣億光億光電子工業(yè)股份有限公司

ER606

SUPERFASTRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Superfastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

EVAL-ADCMP606BKSZ

Single-SupplyCMLComparators

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

FAJAE-606

FRJAEASSEMBLY,6POSITIONAND8POSITION

AMPHENOLAmphenol Corporation

安費諾集團美國安費諾集團

FBR606

FASTRECOVERYBRIDGERECTIFIERS

PRV:50-1000Volts Io:6.0Amperes FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Fastswitchingforhighefficiency *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC discrete Semiconductors

FBR606

SiliconFastRecoveryBridgeRectifier

SiliconFastRecoveryBridgeRectifier

EDAL

Edal Industries, Inc.

FBR606

FASTRECOVERY

EIC

EIC discrete Semiconductors

FDB606

6AMPFASTRECOVERYBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

FDC606P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’slowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ?–6A,–12V. RDS(ON)=26m?@VGS=–4.5V RDS(ON)=35m?@VGS=–2.5V RDS(ON)=53m?@VGS=–

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDC606P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FDC606P

P-ChannelEnhancementModeMOSFET

Application BatteryPack PortableDevices

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

FDM606P

P-Channel1.8VLogicLevelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportable

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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