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DL-601

MicrowaveComponents

HOKURIKUHOKURIKU ELECTRIC INDUSTRY CO.,LTD

北陸電氣工業(yè)日本北陸電氣工業(yè)柱式會(huì)社

DL-601L

MicrowaveComponents

HOKURIKUHOKURIKU ELECTRIC INDUSTRY CO.,LTD

北陸電氣工業(yè)日本北陸電氣工業(yè)柱式會(huì)社

DL-601L/R

MicrowaveComponents

HOKURIKUHOKURIKU ELECTRIC INDUSTRY CO.,LTD

北陸電氣工業(yè)日本北陸電氣工業(yè)柱式會(huì)社

DL-601R

MicrowaveComponents

HOKURIKUHOKURIKU ELECTRIC INDUSTRY CO.,LTD

北陸電氣工業(yè)日本北陸電氣工業(yè)柱式會(huì)社

DMN601DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?DC-DCConverters ?PowerManagementFunctions ?AnalogSwitch Fea

DIODES

Diodes Incorporated

DMN601DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN601DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?DualN-Chann

DIODES

Diodes Incorporated

DMN601DWKQ

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?ESDProtected ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimony

DIODES

Diodes Incorporated

DMN601K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedUpTo2kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu

DIODES

Diodes Incorporated

DMN601K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN601TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?LowOn-Resis

DIODES

Diodes Incorporated

DMN601TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN601TK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN601VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

DMN601VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN601VKQ

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

DMN601WK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qualifi

DIODES

Diodes Incorporated

DMN601WK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN601WKQ

N-CHANNELENHANCEMENTMODEMOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qualifi

DIODES

Diodes Incorporated

DMN601WKQ

WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree.

FEATURES Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ESDProtected:1000V

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    DG601

  • 功能描述：

    模擬開關(guān) IC Analog Switch

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 開關(guān)數(shù)量：

    2

  • 開關(guān)配置：

    SPDT

  • 開啟電阻（最大值）：

    0.1 Ohms

  • 工作電源電壓：

    2.7 V to 4.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    DSBGA-16

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INTERSIL
23+
SOP
9526
詢價(jià)
24+
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3200
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 詢價(jià)
N/A
23+
SOP
5177
現(xiàn)貨
 詢價(jià)
SILICON
2016+
SOP-16
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
SILICONIX
9552
5000
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SILICONIX
00+
SMD16
1601
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
SiL
24+
DIP
17
新
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SILICON
2016+
SOP-16
1000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
SILICONI
23+
SO-16
7100
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
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AD
23+
DIP
1153
專業(yè)優(yōu)勢(shì)供應(yīng)
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更多DG601供應(yīng)商 更新時(shí)間2025-1-9 11:02:00

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