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DI9952T

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N/P-CH 30V 2.9A 8-SOIC

PAM

Diodes Incorporated

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952TRPBF

GenerationVTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

KDS9952A

DualN&P-ChannelEnhancementModeFieldEffectTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KRF9952

HEXFETPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    DI9952T

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個

  • 包裝：

    卷帶（TR）

  • 描述：

    MOSFET N/P-CH 30V 2.9A 8-SOIC

供應(yīng)商型號品牌批號封裝庫存備注價格
Diodes
24+
8-SOIC
7500
詢價
DIODES
1809+
SOP-8
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
DIODES
22+
NA
78
加我QQ或微信咨詢更多詳細信息,
 詢價
Diodes
22+
8SOP
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
8SOP
13880
公司只售原裝,支持實單
 詢價
Diodes Incorporated
2022+
8-SOP
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
DiodesInc
23+
SO-8
7750
全新原裝優(yōu)勢
 詢價
DI
20+
SOP-8
2960
誠信交易大量庫存現(xiàn)貨
 詢價
DIODES
2023+
SOP8
3750
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
ROHM/羅姆
23+
1537
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多DI9952供應(yīng)商 更新時間2025-2-3 16:30:00

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