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DR100P06-S

包裝:散裝 類別:焊接,拆焊,返修產(chǎn)品 焊接模版,模板 描述:DUAL ROW 1MM PITCH 6-PIN CONNECT

CHIPQUIKChip Quik Inc.

奇普奎克

NP100P06PDG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P06PLG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    DR100P06-S

  • 制造商:

    Chip Quik Inc.

  • 類別:

    焊接,拆焊,返修產(chǎn)品 > 焊接模版,模板

  • 系列:

    Proto-Advantage DR

  • 包裝:

    散裝

  • 間距:

    0.039"(1.00mm)

  • 材料:

    不銹鋼

  • 描述:

    DUAL ROW 1MM PITCH 6-PIN CONNECT

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更多DR100P06-S供應(yīng)商 更新時(shí)間2025-1-29 9:30:00