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DS1245Y-120中文資料Dallas數(shù)據(jù)手冊PDF規(guī)格書

DS1245Y-120
廠商型號

DS1245Y-120

參數(shù)屬性

DS1245Y-120 封裝/外殼為32-DIP 模塊(0.600",15.24mm);包裝為管件;類別為集成電路(IC) > 存儲器;產(chǎn)品描述:IC NVSRAM 1MBIT PARALLEL 32EDIP

功能描述

1024k Nonvolatile SRAM

文件大小

221.24 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Dallas Semiconductor
企業(yè)簡稱

Dallas

中文名稱

Dallas Semiconductor官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-11-5 18:49:00

DS1245Y-120規(guī)格書詳情

DESCRIPTION

The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power

■ Data is automatically protected during power loss

■ Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

■ Unlimited write cycles

■ Low-power CMOS

■ Read and write access times of 70 ns

■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

■ Full ±10 VCC operating range (DS1245Y)

■ Optional ±5 VCC operating range (DS1245AB)

■ Optional industrial temperature range of -40°C to +85°C, designated IND

■ JEDEC standard 32-pin DIP package

■ PowerCap Module (PCM) package

- Directly surface-mountable module

- Replaceable snap-on PowerCap provides lithium backup battery

- Standardized pinout for all nonvolatile SRAM products

- Detachment feature on PowerCap allows easy removal using a regular screwdriver

產(chǎn)品屬性

  • 產(chǎn)品編號:

    DS1245Y-120

  • 制造商:

    Analog Devices Inc./Maxim Integrated

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    管件

  • 存儲器類型:

    非易失

  • 存儲器格式:

    NVSRAM

  • 技術:

    NVSRAM(非易失性 SRAM)

  • 存儲容量:

    1Mb(128K x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    120ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    32-DIP 模塊(0.600",15.24mm)

  • 供應商器件封裝:

    32-EDIP

  • 描述:

    IC NVSRAM 1MBIT PARALLEL 32EDIP

供應商 型號 品牌 批號 封裝 庫存 備注 價格
DALLAS
1802+
DIP
6528
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
詢價
Maxim Integrated
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
DALLAS
20+
DIP
26580
全新原裝長期特價銷售
詢價
MAXIMINTEGRA
22+
32-DIP模塊(600
7479
絕對進口原裝現(xiàn)貨
詢價
DS
DIP
11500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
MAXIM(美信)
2021+
EDIP-32
499
詢價
DALLAS
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
詢價
DS
23+
DIP
90000
只做原廠渠道價格優(yōu)勢可提供技術支持
詢價
DALLAS
23+
DIP
9526
詢價
dallas
23+
pdip
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
詢價