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DS1245Y-120中文資料Dallas數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
DS1245Y-120 |
參數(shù)屬性 | DS1245Y-120 封裝/外殼為32-DIP 模塊(0.600",15.24mm);包裝為管件;類別為集成電路(IC) > 存儲器;產(chǎn)品描述:IC NVSRAM 1MBIT PARALLEL 32EDIP |
功能描述 | 1024k Nonvolatile SRAM |
文件大小 |
221.24 Kbytes |
頁面數(shù)量 |
12 頁 |
生產(chǎn)廠商 | Dallas Semiconductor |
企業(yè)簡稱 |
Dallas |
中文名稱 | Dallas Semiconductor官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-5 18:49:00 |
DS1245Y-120規(guī)格書詳情
DESCRIPTION
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times of 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10 VCC operating range (DS1245Y)
■ Optional ±5 VCC operating range (DS1245AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 32-pin DIP package
■ PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver
產(chǎn)品屬性
- 產(chǎn)品編號:
DS1245Y-120
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
集成電路(IC) > 存儲器
- 包裝:
管件
- 存儲器類型:
非易失
- 存儲器格式:
NVSRAM
- 技術:
NVSRAM(非易失性 SRAM)
- 存儲容量:
1Mb(128K x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
120ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
通孔
- 封裝/外殼:
32-DIP 模塊(0.600",15.24mm)
- 供應商器件封裝:
32-EDIP
- 描述:
IC NVSRAM 1MBIT PARALLEL 32EDIP
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
DALLAS |
1802+ |
DIP |
6528 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價 | ||
Maxim Integrated |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
DALLAS |
20+ |
DIP |
26580 |
全新原裝長期特價銷售 |
詢價 | ||
MAXIMINTEGRA |
22+ |
32-DIP模塊(600 |
7479 |
絕對進口原裝現(xiàn)貨 |
詢價 | ||
DS |
DIP |
11500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MAXIM(美信) |
2021+ |
EDIP-32 |
499 |
詢價 | |||
DALLAS |
2405+ |
原廠封裝 |
12500 |
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐 |
詢價 | ||
DS |
23+ |
DIP |
90000 |
只做原廠渠道價格優(yōu)勢可提供技術支持 |
詢價 | ||
DALLAS |
23+ |
DIP |
9526 |
詢價 | |||
dallas |
23+ |
pdip |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |