DS1258Y-100-IND中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

FEATURES

10-Year Minimum Data Retention in the Absence of External Power

Data is Automatically Protected During a Power Loss

Separate Upper Byte and Lower Byte Chip Select Inputs

Unlimited Write Cycles

Low-Power CMOS

Read and Write Access Times as Fast as 70ns

Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time

Full
10 Operating Range (DS1258Y)

Optional
5 Operating Range (DS1258AB)

Optional Industrial Temperature Range of -40C to +85C, Designated IND