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DS1265W-150-IND中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書
DS1265W-150-IND規(guī)格書詳情
DESCRIPTION
The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
FEATURES
? 10 years minimum data retention in the absence of external power
? Data is automatically protected during power loss
? Unlimited write cycles
? Low-power CMOS operation
? Read and write access times as fast as 100ns
? Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
? Optional industrial (IND) temperature range of -40°C to +85°C
產(chǎn)品屬性
- 型號：
DS1265W-150-IND
- 制造商：
DALLAS
- 制造商全稱：
Dallas Semiconductor
- 功能描述：
3.3V 8Mb Nonvolatile SRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DALLAS |
2405+ |
原廠封裝 |
12500 |
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐 |
詢價 | ||
DALLAS |
23+ |
DIP-36 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 | |||
Maxim Integrated |
23+ |
36-EDIP |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
DALLAS |
23+ |
DIP36 |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
DALLAS |
22+ |
DIP |
33912 |
原裝正品現(xiàn)貨 |
詢價 | ||
Maxim |
22+ |
DIP |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
DALLAS |
05+ |
PSDIP |
8 |
自己公司全新庫存絕對有貨 |
詢價 | ||
DALLAS |
23+ |
DIP |
9896 |
詢價 | |||
MAXIM |
23+ |
35500 |
詢價 |
