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DS_K4S161622E中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書
DS_K4S161622E規(guī)格書詳情
GENERAL DESCRIPTION
The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
? 3.3V power supply
? LVTTL compatible with multiplexed address
? Dual banks operation
? MRS cycle with address key programs
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
? All inputs are sampled at the positive going edge of the system clock
? Burst Read Single-bit Write operation
? DQM for masking
? Auto & self refresh
? 15.6us refresh duty cycle (2K/32ms)
產(chǎn)品屬性
- 型號(hào):
DS_K4S161622E
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
1M x 16 SDRAM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NS |
23+ |
NA |
12000 |
全新原裝假一賠十 |
詢價(jià) | ||
MICROCHIP/微芯 |
22+ |
sopdipqfp |
9000 |
原裝正品 |
詢價(jià) | ||
DALLAS |
23+ |
原廠原裝 |
1002 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
NS |
24+ |
DIP-8 |
3500 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
FUJITSU |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
NS |
1822+ |
DIP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
RICHTEK/立锜 |
23+ |
QFN |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
Microchip |
23+ |
2017-MI |
21500 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
DEUTSCH |
17 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | ||||
A |
24+ |
b |
8 |
詢價(jià) |