首頁 >DTL4N60>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

DTL4N60

Power MOSFET Reduced Gate Drive Requirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60

ReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60F

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

ReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

ET4N60

600V,4A,N-ChannelPowerMOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FCD4N60

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCD4N60TF

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

600VN-ChannelMOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD4N60NZ

FDD4N60NZN-ChannelUniFETTMIIMOSFET600V,3.4A,2.5?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP4N60NZ

N-ChannelMOSFET600V,3.8A,2.5廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
DIN-TEK
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
DIN-TEK鼎日
23+
TO-251
46546
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
DIN-TEK
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
DTU主做主推
23+
2020+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
Essentra
22+
NA
168
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
DIA
2021+
RoHs
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
DINGDAY
16
TO-220
6000
絕對原裝自己現(xiàn)貨
 詢價(jià)
DIN-TEK
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
Phoenix/菲尼克斯
23/24+
2881007
8036
優(yōu)勢特價(jià) 原裝正品 全產(chǎn)品線技術(shù)支持
 詢價(jià)
PHOENIX
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
 詢價(jià)
更多DTL4N60供應(yīng)商 更新時(shí)間2024-12-26 14:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多