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I730

6A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

IRC730

PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRF

International Rectifier

IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTAC

Suntac Electronic Corp.

IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

產(chǎn)品屬性

  • 產(chǎn)品編號：

    DVK-BT730-SA

  • 制造商：

    Laird Connectivity Inc.

  • 類別：

    開發(fā)板，套件，編程器 > 射頻評估和開發(fā)套件，開發(fā)板

  • 包裝：

    盒

  • 類型：

    收發(fā)器; Bluetooth? Classic

  • 頻率：

    2.4GHz

  • 配套使用/相關(guān)產(chǎn)品：

    BT730-SA

  • 所含物品：

    板，電纜

  • 描述：

    DEV KIT FOR BT730 V2.0

供應(yīng)商型號品牌批號封裝庫存備注價格
LAIRD
20+
射頻元件
155
就找我吧!--邀您體驗愉快問購元件!
 詢價
LAIRD
23+
2013+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
LAIRD
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
 詢價
LAIRD
23+
2013+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
LAIRD
2022+
1000
只做原裝,價格優(yōu)惠,長期供貨。
 詢價
LAIRD
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
LAIRD
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
24+
N/A
70000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
LINX
24+
原廠封裝
4612
原裝現(xiàn)貨假一罰十
 詢價
MELEXIS/邁來芯
23+
5177
深圳現(xiàn)貨
 詢價
更多DVK-BT730-SA供應(yīng)商 更新時間2021-9-14 10:50:00

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