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E10N60

10A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

E10N60

10A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

E10N60

10A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

E10N60

10A 600V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

F10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

F10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

F10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

F10N60

10A600VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

FDP10N60NZ

N-ChannelUniFETTMIIMOSFET600V,10A,750m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP10N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP10N60ZU

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild??proprietary,planarstripe,DMOStechnology.

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

N-ChannelUniFETTMIIMOSFET600V,10A,750m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDPF10N60ZUT

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FGP10N60UNDF

600V,10AShortCircuitRatedIGBT

GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGPF10N60UNDF

600V,10AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FIR10N60AFG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR10N60FG

AdvancedN-ChPowerMOSFET-G

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
NA/
25000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
ON.SEMI
00/01+
SOP-8
2800
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
ON
10+
SOP-8
7800
全新原裝正品,現(xiàn)貨銷售
 詢價
ON
24+
SOP-8
6900
詢價
ON
23+
SOP8
91
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價
ON
13+
SOP8
91
剛到現(xiàn)貨加微13425146986
 詢價
ON
21+
SOP8
35400
全新原裝現(xiàn)貨/假一罰百!
 詢價
ON/安森美
22+
SOP8
5623
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
ON/安森美
2021+
SOP8
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ON/安森美
21+
SOP-8
30000
百域芯優(yōu)勢 實單必成 可開13點增值稅發(fā)票
 詢價
更多E10N60供應(yīng)商 更新時間2024-12-23 10:10:00

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