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FDP10N60NZ

N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP10N60NZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP10N60ZU

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild??proprietary,planarstripe,DMOStechnology.

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

N-ChannelUniFETTMIIMOSFET600V,10A,750m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDPF10N60ZUT

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FGP10N60UNDF

600V,10AShortCircuitRatedIGBT

GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGPF10N60UNDF

600V,10AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    FDP10N60NZ

  • 功能描述：

    MOSFET 600N-Channel MOSFET UniFET-II

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-220-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ONSEMI
18+ROHS
NA
3000
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
onsemi(安森美)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ON/安森美
2410+
TO-220
8000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
ONSemiconductor
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
FAIRCHILD
22+23+
TO220
12608
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
FAIRCHILD
18+
TO-220
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
FAIRCHI
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
FAIRCHILD/仙童
22+
TO220
29854
原裝正品現(xiàn)貨
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
更多FDP10N60NZ供應商 更新時間2025-2-1 14:14:00

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