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PESD15VS5UD

Marking:E4;Package:SC-74;Fivefold ESD protection diode arrays

1.1Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearraysinaSOT457(SC-74)small Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptofivesignallines fromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications nESDpr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PESD15VS5UD-Q

Marking:E4;Package:SOT457;Fivefold ESD protection diode array

1.Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearrayinaSOT457(SC-74)smallSurface- MountedDevice(SMD)plasticpackage,designedtoprotectuptofivesignallinesfromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits ?ESDprotecti

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMEG100T20ELP

Marking:E4;Package:CFP5;100 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecurren

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMEG100T20ELP-Q

Marking:E4;Package:CFP5;100 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecurren

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMEG3005AEA

Marking:E4;Package:SOD323;Very low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD323(SC-76)verysmallSMDplastic package. 2.Featuresandbenefits ?Verylowforwardvoltage ?Highsurgecurr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

RBR3MM60BTF

Marking:E4;Package:SOD-123FL;Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype LowVF ●Application Generalrectification

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

SSM6P35AFE

Marking:E4;Package:ES6;Analog Switches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2?(typ.)(@VGS=-1.2V) RDS(ON)=2.3?(typ.)(@VGS=-1.5V) RDS(ON)=2.0?(typ.)(@VGS=-1.8V) RDS(ON)=1.5?(typ.)(@VGS=-2.5V) RDS(ON)=1.1?(typ.)(@

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6P35AFE

Marking:E4;Package:ES6;MOSFETs Silicon P-Channel MOS

1.Applications ?AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6P35AFU

Marking:E4;Package:US6;MOSFETs Silicon P-Channel MOS

1.Applications ?AnalogSwitches 2.Features (1)1.2Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=3.2Ω(typ.)(@VGS=-1.2V) RDS(ON)=2.3Ω(typ.)(@VGS=-1.5V) RDS(ON)=2.0Ω(typ.)(@VGS=-1.8V) RDS(ON)=1.5Ω(typ.)(@VGS=-2.5V) RDS(ON)=1.1Ω(typ.)(@VGS=-

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6P35AFU

Marking:E4;Package:US6;Analog Switches

Features (1)1.2Vdrive (2)ESD(HBM)level2kV (3)Lowdrain-sourceon-resistance :RDS(ON)=3.2?(typ.)(@VGS=-1.2V) RDS(ON)=2.3?(typ.)(@VGS=-1.5V) RDS(ON)=2.0?(typ.)(@VGS=-1.8V) RDS(ON)=1.5?(typ.)(@VGS=-2.5V) RDS(ON)=1.1?(typ.)(@

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    E4

  • 制造商:

    FLIR COMMERCIAL SYSTEMS

  • 功能描述:

    Thermal Imager, IR Camera, 160x120, 60 Hz, 3.5 In. Color LCD, 19,200 Pixels, E-Series

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