EDI2CG272128V9D1中文資料WEDC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM (144 contacts) Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The module architecture is defi ned as a Sync/ Sync Burst, Flow-Through, with support for linear burst. This module provides High Performance, 2-1-1-1 accesses when used in Burst Mode, and used as a Synchronous Only Mode, provides a high performance cost advantage over BiCMOS aysnchronous device architectures.

FEATURES

■ 2x128Kx72 Synchronous, Synchronous Burst

■ Flow-Through Architecture

■ Linear and Sequential Burst Support via MODE pin

■ Access Speed(s): TKHQV = 8.5, 9, 12, 15ns

■ Clock Controlled Registered Bank Enables (E1#, E2#)

■ Clock Controlled Registered Address

■ Clock Controlled Registered Global Write (GW#)

■ Aysnchronous Output Enable (G#)

■ Internally Self-timed Write

■ Individual Bank Sleep Mode enables (ZZ1, ZZ2)

■ Gold Lead Finish

■ 3.3V ± 10 Operation

■ Common Data I/O

■ High Capacitance (30pf) drive, at rated Access Speed

■ Single Total Array Clock

■ Multiple Vcc and Gnd