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EIA1011-2P

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

BLA1011-2

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLA1011-2

AvionicsLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

EIB1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

NEZ1011-2E

GaAsMESFET

2WX-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinXband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NEZ1011-2E

2WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

TIM1011-2L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細(xì)參數(shù)

  • 型號：

    EIA1011-2P

  • 制造商：

    EXCELICS

  • 制造商全稱：

    EXCELICS

  • 功能描述：

    10.7-11.7GHz, 2W Internally Matched Power FET

供應(yīng)商型號品牌批號封裝庫存備注價格
EXCELICS
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
OTHER
21+
35200
一級代理/放心采購
 詢價
OTHER
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MOT
05+
原廠原裝
4232
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
MOT
23+
280
詢價
EXCELICS
2023+
原裝熱賣中
8700
原裝現(xiàn)貨
 詢價
2017+
NA
28562
只做原裝正品假一賠十!
 詢價
原裝
1922+
NA
9200
公司原裝現(xiàn)貨假一罰十特價歡迎來電咨詢
 詢價
GENERIC
新
319
全新原裝 貨期兩周
 詢價
TOKO
1998
1000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
更多EIA1011-2P供應(yīng)商 更新時間2024-12-23 18:05:00

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