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EIB1011-2P

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

BLA1011-2

AvionicsLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLA1011-2

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

EIA1011-2P

10.7-11.7GHz,2WInternallyMatchedPowerFET

10.7-11.7GHz,2WInternallyMatchedPowerFET ?10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM ?EIAFEATURESHIGHPAE(30TYPICAL) ?EIBFEATURESHIGHIP3(46dBmTYPICAL) ?+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB ?9.5/8.5dBTYPICALG1dBPOWERGAINFOREIA/EI

Excelics

Excelics Semiconductor, Inc.

NEZ1011-2E

2WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NEZ1011-2E

GaAsMESFET

2WX-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1011-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinXband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TIM1011-2L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細(xì)參數(shù)

  • 型號：

    EIB1011-2P

  • 制造商：

    EXCELICS

  • 制造商全稱：

    EXCELICS

  • 功能描述：

    10.7-11.7GHz, 2W Internally Matched Power FET

供應(yīng)商型號品牌批號封裝庫存備注價格
EXCELICS
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
EXCELICS
24+
245
現(xiàn)貨供應(yīng)
 詢價
原裝MOT
2023+
TSOP-8
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
原裝MOT
23+
TSOP-8
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
MOTOROLA
2023+
TSOP-8
4885
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
原裝MOT
23+
TSOP-8
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
Finisar
21+
DNA
3
公司現(xiàn)貨,有掛就有貨。
 詢價
EIC
23+
BGA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
AMI
00+
PLCC32
4793
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
AMI
24+
PLCC32
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多EIB1011-2P供應(yīng)商 更新時間2025-1-24 12:04:00

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