首頁 >EMB50P03JS>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
EMB50P03JS | P??hannel Logic Level Enhancement Mode Field Effect Transistor ProductSummary: BVDSS‐30V RDSON(MAX.)50mΩ ID‐4.5A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | |
P??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
JJW | ||||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET50Amps,30Volts,LogicLevelP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTS HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-channelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponen | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
P-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
P-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET50Amps,30Volts,LogicLevelP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTSRDS(on)=0.025OHM HDTMOSE-FETPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecover | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=8.4mΩMAX.(VGS=?10V,ID=?25A) ?LowCiss:Ciss=2300pFTYP.(VDS=?25V,VGS=0V) ?Designedforautomotiveapp | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
OptiMOS-PPower-Transistor Feature ?P-Channel ?Enhancementmode ?LogicLevel ?Highcurrentrating ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EMC杰力 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
EMC杰力 |
23+ |
SOT-23s |
86764 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
HAMOS/漢姆 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
EMC |
22+ |
SOT23 |
37440 |
只做原裝低價(jià)甩賣假一罰萬 |
詢價(jià) | ||
EMC杰力 |
23+ |
12000 |
詢價(jià) | ||||
HAMOS/漢姆 |
23+ |
NA/ |
30000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
EMC/杰力 |
23+ |
SOT23-3 |
360000 |
交期準(zhǔn)時(shí)服務(wù)周到 |
詢價(jià) | ||
鏉板姏縐戞妧 |
16+ |
TSOP-6 |
18000 |
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥! |
詢價(jià) | ||
杰力科技 |
20+ |
TSOP-6 |
36800 |
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
杰力科技 |
24+ |
TSOP-6 |
18800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢! |
詢價(jià) |
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