首頁 >EMD06N60CS>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
EMD06N60CS | N??hannel Logic Level Enhancement Mode Field Effect Transistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | |
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機富士電機株式會社 | Fuji | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
IGBTinTRENCHSTOPandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ReverseconductingIGBTwithmonolithicbodydiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -VariableSpeedDriveforwashingmachines,airco | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Field-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.1V@IC=6A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SolarConverters ·UninterruptedPowerSupply ·UPS,PFC ·WeldingConverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
EMC/杰力 |
23+ |
TO-251A |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
EMC/杰力 |
24+ |
TO-251A |
2685 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
EMC/杰力 |
23+ |
TO-251A |
30678 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
EMC/杰力 |
23+ |
NA/ |
5040 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
EMC |
1650+ |
TO-220F |
8660 |
只做原裝進口,假一罰十 |
詢價 | ||
E |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價 | ||
E |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
EMC |
2022+ |
TO-220F |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
EMC |
20+ |
TO-220F |
474 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
EMC |
22+ |
TO-220 |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價 |
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