首頁 >EMP75N03HR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
EMP75N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor ProductSummary: SingleNChannelMOSFET UIS,Rg100%Tested Pb-FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | |
N-ChannelEnhancement-ModeMOSFET | GE GE Industrial Company | GE | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
TMOSPOWERFETLOGICLEVEL75AMPERES25VOLTS HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFETLOGICLEVEL75AMPERESRDS(on)=9.0mOHM25VOLTS HDTMOSE-FETHighDensityPowerFET N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.De | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET75Amps,25VoltsN-ChannelD2PAK,TO-220 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET75Amps,25VoltsN??hannelD2PAK,TO??20 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET75Amps,25VoltsN??hannelD2PAK,TO??20 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET75Amps,25VoltsN??hannelD2PAK,TO??20 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET75Amps,25VoltsN-ChannelD2PAK,TO-220 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
EMC/杰力 |
23+ |
EDFN5X6 |
360000 |
交期準(zhǔn)時服務(wù)周到 |
詢價 | ||
EMC |
24+ |
65000 |
詢價 | ||||
EUTECH/臺灣德信 |
21+ |
SOT153 |
120000 |
長期代理優(yōu)勢供應(yīng) |
詢價 | ||
EUTECH/臺灣德信 |
23+ |
SOT153 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
EUTECH |
SOT153 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
EUTECH/臺灣德信 |
22+ |
SOT153 |
50000 |
原裝正品.假一罰十 |
詢價 | ||
EUTECH/臺灣德信 |
23+ |
NA/ |
5950 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
EMST |
15+PB |
SOT23-5 |
2693 |
剛到現(xiàn)貨加微13425146986 |
詢價 | ||
EMST |
2020+ |
SOT23-5 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
EMST |
21+ |
SOT23-5 |
2693 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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